PART |
Description |
Maker |
A63G7332 A63G7332E-42 A63G7332E-45 A63G7332E-5 A63 |
128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的32位同步高的Burst计数器和流水线数据输出高速SRAM 4.2ns 128K x 32bit synchronous high speed SRAM 4.2ns; 128K x 32bit synchronous high speed SRAM with burst counter and pipelined data output 4.5ns 128K x 32bit synchronous high speed SRAM 4.5ns; 128K x 32bit synchronous high speed SRAM with burst counter and pipelined data output
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AMIC Technology, Corp. AMIC Technology Corporation
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
A63P73361E-8F A63P73361 A63P73361E A63P73361E-6.5 |
128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output 128K的米6位同步计数器高的Burst SRAM的速度和流量,通过数据输出
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
IDT70T3319S133BF IDT70T3319S133BC IDT70T3319S133DD |
JFET-Input Operational Amplifier 8-SOIC 0 to 70 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高.5V12/256/128K X 18 SYNCHRONOU S双,端口静态与3.3V.5V的内存界 JFET-Input Operational Amplifier 8-TSSOP 0 to 70 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 JFET-Input Operational Amplifier 8-SO 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA208
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
FM27C010 FM27C010X150 FM27C010X90 FM27C010X120 FM2 |
128K X 8 OTPROM, 150 ns, PQCC32 PLASTIC, LCC-32 From old datasheet system 1,048,576-Bit (128K x 8)High Performance CMOS EPROM
|
Fairchild Semiconductor, Corp.
|
A43L8316V-7 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
A43L8316V-10 A43L8316V-8 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作) 128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7B201825A |
128K x 18-Bit Synchronous Burst SRAM Data Sheet
|
Samsung Electronic
|
K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999) 128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
CY7C0852V |
3.3V 64K/128K X 36 And 128K/256K X 18 Synchronous Dual-port RAM
|
CYPRESS
|